In Pictures: Infineon becomes first to produce functional power devices on 300 mm SiC wafers

Infineon's 300 mm SiC breakthrough brings larger wafer formats closer to full-scale semiconductor production.

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The Villach fab used existing silicon equipment to fabricate working power devices on 300 mm SiC wafers.

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Larger 300 mm wafers yield 2.3 times more chips than 200 mm, supporting SiC industrialization.

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The advance targets power applications in electric vehicles, energy storage and data centers.

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Infineon says the milestone marks the first functional power devices on 300 mm SiC wafers in a full-scale production environment.

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Silicon carbide's efficiency advantages make it central to next-generation power electronics.

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The larger wafer format could accelerate SiC industrialization across the power semiconductor supply chain.

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Working devices were demonstrated using production-ready processes rather than lab-scale methods.

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Infineon positions the 300 mm SiC milestone as a step toward more scalable power device manufacturing.

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