semiconductor

NoMIS Power debuts 6.5 kV SiC MOSFET, starts sampling to US customers

NoMIS Power has demonstrated its first 6.5 kV large-die SiC MOSFET, achieving over 8 kV blocking voltage with 90 mΩ on-resistance and 55 A drain current, now sampling to US customers. Production versions are slated for Q4 2026, targeting applications like HVDC, solid-state transformers, and MW-scale EV charging.