L&T Semiconductor Launches 1,200 V SiC MOSFET Platform for EV Fast Chargers
Summary
L&T Semiconductor Technologies has unveiled its first in-house silicon carbide power modules and a 1,200 V SiC MOSFET platform targeting EV fast chargers, traction inverters, and microgrids. The higher-voltage SiC devices switch faster with lower losses than silicon IGBTs, helping designers shrink magnetics and cooling hardware for 800 V architectures.
L&T Semiconductor Technologies (LTSCT), a wholly owned subsidiary of Larsen & Toubro, has unveiled a variety of new products, including the company’s first in-house SiC power modules and devices, as well as MOSFETs, diodes and bridge rectifiers.
A new 1,200 V silicon carbide (SiC) MOSFET platform is designed for EV fast chargers, traction inverters, microgrids and solid-state transformers.
Devices rated at 1,200 V are commonly used for power stages in 800 V vehicle architectures and DC fast chargers, the company explains. At these voltages, SiC MOSFETs switch faster and with lower losses than silicon IGBTs, which lets designers shrink magnetics and cooling hardware.
The company also unveiled a brushless DC (BLDC) motor controller designed entirely in India, along with four connectivity modules for smart metering, automotive applications and digital payments.
Source: L&T Semiconductor Technologies
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