Magnachip licenses Navitas GeneSiC SiC tech for high-voltage power

Magnachip Semiconductor is moving into the high-voltage and ultra-high-voltage silicon carbide market by licensing Navitas Semiconductor’s GeneSiC technology. The license covers Navitas’ Gen 4 and Gen 5 GeneSiC Trench-Assisted Planar (TAP) technologies at 1,200 V, 2,300 V, 3,300 V and higher. This coverage centres on silicon carbide technology.

GeneSiC came to Navitas through its August 2022 acquisition of GeneSiC Semiconductor. Charged covered the Gen 5 platform when Navitas introduced it in February 2026. The TAP structure is the basis of Navitas’s high-voltage SiC devices for medium-voltage grid and infrastructure applications.

Magnachip also gains access to Navitas’s SiC supply chain and materials ecosystem. The technology is planned to be ported, qualified and internalized at Magnachip’s fab in South Korea, and the companies expect that approach to speed Magnachip’s entry into SiC while maintaining continuity with Navitas’ existing technology and materials base.

The companies say the licensed technologies will support applications including energy and grid infrastructure, energy storage, industrial electrification, automotive and other high-power systems in Korea.

Navitas and Magnachip say the agreement also covers areas beyond SiC that they expect to detail later.

“By licensing our proven GeneSiC technologies and supporting Magnachip through our supply-chain and materials ecosystem, we are creating a path to scale advanced SiC solutions more rapidly while enabling a deeper, long-term collaboration between our companies,” said Chris Allexandre, Navitas President and CEO.

At 3,300 V and above, SiC devices compete with silicon IGBTs in grid-scale converters and traction drives. A higher blocking voltage per device reduces the number of parts that have to be connected in series, and SiC’s lower switching losses allow higher switching frequencies and smaller magnetics.

“This agreement opens an important new market opportunity for Magnachip in high-voltage and ultra-high-voltage SiC,” said Chae Lee, Magnachip’s Chief Executive Officer. “The addition of GeneSiC technology complements our existing MOSFET and power semiconductor portfolio and positions Magnachip to serve customers that require higher efficiency, higher voltage capability and more reliable power conversion solutions.”

Source: Navitas Semiconductor